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The effect of ultraviolet (UV) photons for the improvement of photoconductivity in hydrogenated amorphous silicon (a‐Si:H) films has been investigated by intermittent deposition and UV laser irradiation procedures. It is found that UV photons stimulate precursor reaction on the growth surface effectively, and this results in improved photoelectronic properties of a‐Si:H. Moreover, lifetime of precursors on the growth surface is estimated to be on the order of seconds under UV photon irradiation at room temperature.