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Lower‐temperature plasma etching of Cu films using infrared radiation

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2 Author(s)
Hosoi, N. ; Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan ; Ohshita, Y.

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The etching of Cu films is achieved at lower temperature (150 °C) with Cl2 plasma by IR light radiation. Anisotropic fine Cu patterns are obtained. The etch rate is 4000 Å/min and there are no microloading effects. It is considered that the etching temperature lowering and the anisotropy are realized by the IR light enhancement of CuClx desorption.  

Published in:

Applied Physics Letters  (Volume:63 ,  Issue: 19 )

Date of Publication:

Nov 1993

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