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Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers

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6 Author(s)
Im, Seongil ; Department of Materials Science and Engineering, University of California, Berkeley, California 94720 ; Washburn, Jack ; Gronsky, Ronald ; Cheung, Nathan W.
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In order to study the strain‐compensation effect by C atoms in solid phase epitaxial (SPE) growth of SiGe alloy layers, C sequential implantation was performed in [100] oriented Si substrates with various doses after high dose (5×1016/cm2) Ge implantation. When the nominal peak concentration of implanted C was over 0.55 at. % in the present sample series, misfit dislocation generation in the epitaxial layer was considerably suppressed. A SiGe alloy layer with 0.9 at. % C peak concentration under a 12 at. % Ge peak shows the greatest improved crystallinity compared to layers with smaller C peak concentrations. The experimental results, combined with a simple model calculation, indicate that the optimum Ge/C ratio for strain compensation is between 11 and 22.

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Applied Physics Letters  (Volume:63 ,  Issue: 19 )