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Optimization of InGaAsP/InP quantum well heterostructures for enhanced excitonic electroabsorption effects at 1.55 μm

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2 Author(s)
Sugie Shim ; ETRI Research Department, Daedog Science Town, Daejeon City 305‐606, Republic of Korea ; El-Hang Lee

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We report an optimization method on the basis of theoretical calculation to enhance the excitonic electroabsorption effect in the quaternary InGaAsP/InP quantum well structures for use in the bistable switching devices operating at 1.55 μm wavelength. We searched for the maximum value of a parameter γ, defined as [α(0)-α(F)]/α(F), by adjusting x, y, and quantum well width in the In1-xGaxAsyP1-y/InP heterostructure assuming that the heavy‐hole excitonic absorption peaks at zero electric field occur at 1.55 μm wavelength. We obtained 30.2 as the maximum value of γ for y=1.0, x=0.477, and quantum well width 90 Å, and found that this value is about three times as high as that of the conventional ternary quantum well structure.  

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Applied Physics Letters  (Volume:63 ,  Issue: 17 )