By Topic

Electron spin resonance investigations of oxidized porous silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Meyer, B.K. ; Physik Department E 16, Technical University Munich, D‐85747 Garching, Germany ; Petrova‐Koch, V. ; Muschik, T. ; Linke, H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.110652 

The defect properties of rapidly thermally oxidized porous silicon are studied by electron paramagnetic resonance. Two different types of defects can be distinguished. One is very similar to the defects observed in damaged crystalline or amorphous Si, whereas the second one is closely related to the Pb center. A maximum defect density of 8×1018 cm-3 is observed for samples annealed at about 600 °C. The intensity of the photoluminescence band at 1.7 eV anticorrelates with the density of the defects.

Published in:

Applied Physics Letters  (Volume:63 ,  Issue: 14 )