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Confinement of high Be doping levels in AlInAs/GaInAs npn heterojunction bipolar transistors by low temperature molecular‐beam epitaxial growth

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6 Author(s)
Metzger, R.A. ; Hughes Research Laboratories, Malibu, California 90265 ; Hafizi, M. ; Stanchina, W.E. ; Liu, T.
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AlInAs/GaInAs npn heterojunction bipolar transistors (HBTs) have been grown over a substrate temperature range of 280–450 °C with Be base doping levels ranging from 2.0×1019 to 1.6×1020 cm-3. We have determined that for a desired base doping level there exists an optimum growth temperature at which the Be is confined in the base and at the same time the dc current gain of the HBT is maximized.

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Applied Physics Letters  (Volume:63 ,  Issue: 10 )