By Topic

Very thin CoSi2 films by Co sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Maszara, W.P. ; Allied‐Signal Aerospace Co., Columbia, Maryland 21045

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The structure, resistivity, and thermal stability of CoSi2 films ranging in thickness from ∼11 to 52 nm were investigated. Both the bulk and the surface components of the resistivity were extracted. The films exhibited good thermal stability. The thermal stability and the silicidation temperature which gave the minimum film sheet resistance were found to increase with the sputtered film thickness. The sheet resistance was independent of the ramp‐up rate (3–20 °C/s), prolonged exposure of the Co film to air, and the presence of native oxides on the Si surface prior to Co deposition.

Published in:

Applied Physics Letters  (Volume:62 ,  Issue: 9 )