The structure, resistivity, and thermal stability of CoSi2 films ranging in thickness from ∼11 to 52 nm were investigated. Both the bulk and the surface components of the resistivity were extracted. The films exhibited good thermal stability. The thermal stability and the silicidation temperature which gave the minimum film sheet resistance were found to increase with the sputtered film thickness. The sheet resistance was independent of the ramp‐up rate (3–20 °C/s), prolonged exposure of the Co film to air, and the presence of native oxides on the Si surface prior to Co deposition.