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Fabrication of aluminum oxide thin films by a low‐pressure metalorganic chemical vapor deposition technique

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5 Author(s)
Kim, J.S. ; Department of Materials Science & Engineering, University of Kentucky, Lexington, Kentucky 40506 ; Marzouk, H.A. ; Reucroft, P.J. ; Robertson, J.D.
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Amorphous Al2O3 thin films were grown on Si(100) and glass substrates by low‐pressure metalorganic chemical vapor deposition using aluminum acetylacetonate and water vapor as source materials. Water vapor played an important role in the oxidation process and produced carbon‐free, pure Al2O3 films. The deposition temperature could be lowered to 230 °C. The films were characterized by means of x‐ray diffraction, x‐ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, and ellipsometry.

Published in:

Applied Physics Letters  (Volume:62 ,  Issue: 7 )

Date of Publication:

Feb 1993

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