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Frequency tuning of a double‐heterojunction AlGaAs/GaAs‐vertical‐cavity surface‐emitting laser by a serial integrated in‐cavity modulator diode

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6 Author(s)
Gmachl, C. ; Walter Schottky Institut, Am Coulombwall, D‐8046 Garching, Germany ; Kock, A. ; Rosenberger, M. ; Gornik, E.
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The frequency tuning of a vertical‐cavity surface‐emitting laser through current injection is reported herein. This was achieved by integrating an AlGaAs graded‐index p–n‐modulator diode with a double‐hetero GaAs/AlGaAs laser diode in a vertical cavity formed by an AlAs/AlGaAs‐Bragg reflector and a metallic mirror. Experimental results show an obtained gradient of frequency shift up to 0.93 GHz/mA by the modulator current. This effect is at present restricted to approximately 40 mA due to thermal effects. A theoretical model based on the plasma effect and thermal effects agrees with the experimental values and predicts a maximum value for the gradient of frequency shift of 1.15 GHz/mA with the presented structure.  

Published in:
Applied Physics Letters  (Volume:62 ,  Issue: 3 )

Date of Publication: Jan 1993

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