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Epitaxial nonlinear optical films of LiTaO3 grown on GaAs in waveguide form

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4 Author(s)
Hung, L.S. ; Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650‐2011 ; Agostinelli, J.A. ; Mir, J.M. ; Zheng, L.R.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.109138 

Nonlinear optical films of LiTaO3 were epitaxially grown on (NH4)2Sx‐treated (111) GaAs using e‐beam evaporated MgO as intermediate layers. The MgO lattice was found to rotate by 180° about the [111] surface normal with respect to the GaAs substrate. The laser‐ablated LiTaO3 film grew epitaxially in the preferred [0001] direction and formed a waveguide with its underlying buffer layer of MgO.

Published in:

Applied Physics Letters  (Volume:62 ,  Issue: 24 )

Date of Publication:

Jun 1993

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