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Effects of Al2O3 cap on the structural and electrical properties of Au/Te/Au contacts on an n‐type GaAs substrate

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6 Author(s)
Lin, X.W. ; Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 ; Piotrowska, A. ; Kaminska, E. ; Liliental‐Weber, Z.
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Au/Te/Au contacts to n‐type GaAs were prepared by sequential vapor deposition and subsequently annealed at temperatures in the range 420–480 °C. The structural and electrical characteristics of the contacts were characterized by transmission electron microscopy and current–voltage measurements. We found that the electrical behavior of the contacts depends dramatically on whether they are covered with an Al2O3 cap during annealing. While a cap‐annealed Au/Te/Au contact remains rectifying, annealing without the cap results in ohmic behavior. In conjunction with the observed structural properties, this phenomenon can be understood in terms of the doping model for ohmic contact formation.  

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Applied Physics Letters  (Volume:62 ,  Issue: 23 )