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A newly developed imaging‐plate plane‐wave x‐ray topography (IPPWT) method has been successfully applied to the quantitative analysis of local lattice distortion due to growth striations in magnetic‐field‐applied Czochralski silicon single crystals. IPPWT was found to possess sufficient spatial resolution to accurately measure variations of growth‐induced local lattice distortions (Δd/d and Δα). The advantageous features of IPPWT, in comparison with conventional photographic‐plate plane‐wave x‐ray topography, are a wide latitude in x‐ray exposure conditions, better x‐ray intensity linearity for performing quantitative analysis, and convenience in image processing and data handling.