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High‐mobility p‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si

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5 Author(s)
Nayak, D.K. ; Department of Electrical Engineering, University of California, Los Angeles, California 90024 ; Woo, J.C.S. ; Park, J.S. ; Wang, K.L.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.109205 

An enhancement‐mode p‐channel metal‐oxide‐semiconductor field‐effect transistor (PMOSFET) is fabricated on a strained Si layer for the first time. A biaxial strain in a thin Si layer is produced by pseudomorphically growing this layer on a Ge0.25Si0.75 buffer layer which is grown on a Si substrate. At higher magnitude of gate bias, channel mobility of a strained Si PMOSFET has been found to be 50% higher than that of an identically processed conventional Si PMOSFET.

Published in:

Applied Physics Letters  (Volume:62 ,  Issue: 22 )

Date of Publication:

May 1993

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