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Electron transport properties of a strained Si layer on a relaxed Si1-xGex substrate by Monte Carlo simulation

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3 Author(s)
Miyata, H. ; Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287‐6206 ; Yamada, Toshishige ; Ferry, D.K.

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The in‐plane transport properties of a strained (100) Si layer on a relaxed Si1-xGex substrate are studied with an ensemble Monte Carlo technique. Similar velocity (‐field) characteristics are found for strained Si with any valley splitting energy ΔE≥0.1 eV. These phonon‐limited electron mobilities reach 4000 cm2/V s at 300 K, and 23 000 cm2/V s at 77 K. There is only a slight increase in the saturation velocity at both temperatures. However, a significant overshoot peak transient velocity is found to depend upon ΔE, and for ΔE=0.4 eV, reaches 4.1×107 cm/s at 300 K, and 5.2×107 cm/s at 77 K.

Published in:

Applied Physics Letters  (Volume:62 ,  Issue: 21 )

Date of Publication:

May 1993

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