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We have studied by transmission electron microscopy the structural changes that take place in monocrystalline InP grown by gas source molecular beam epitaxy at low temperature upon annealing at about 600 °C. It is shown that the partial relaxation of the crystal which is observed by x rays is due to the formation of small precipitates (3–7 nm). Electron diffraction experiments show that the structure of these precipitates is cubic with a simple cube‐to‐cube orientation relationship with the substrate. Most probably, these precipitates are of alpha‐white cubic P which is known to be insulating.