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A 2.4-GHz silicon bipolar oscillator with integrated resonator

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8 Author(s)
Soyuer, M. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Jenkins, K.A. ; Burghartz, J.N. ; Ainspan, H.A.
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A 2.4 GHz fully-monolithic silicon-bipolar oscillator circuit implemented in a 12 GHz BiCMOS technology is presented. The integrated resonator circuit uses three different versions of a 2 nH multilevel inductor and a wideband capacitive transformer. The measured Q factor is 9.3 for the three-level inductor. An oscillator phase noise of -78 dBc/Hz is achieved at 20 kHz offset. The circuit dissipates 50 mW from a 3.6 V supply

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Solid-State Circuits, IEEE Journal of  (Volume:31 ,  Issue: 2 )