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The kinetics of the fluorinated oxidation of polycrystalline silicon thin films has been investigated and compared to the (100) single‐crystal silicon case. The growth of silicon dioxide was performed at oxidation temperatures down to 650 °C in dry ambients, which was made possible by fluorine‐induced oxidation enhancement; growth rates in the presence of fluorine additions approach those of wet oxidation. Silicon dioxide films grown on polycrystalline silicon were found to be thicker by about 10%–20% compared to films grown on (100) single‐crystal silicon oxidized under the same conditions. The application of fluorinated gate oxides in the fabrication of n‐channel polycrystalline silicon thin‐film transistors was found to improve the effective electron mobility.