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Data are presented demonstrating the influence of the precise placement of a GaAs quantum well in a 5 μm long AlGaAs vertical cavity. It is shown that, even for this relatively long cavity, when the emitting dipoles are confined to a region significantly less than the optical wavelength, the quantum well placement influences not only the spectral shape of the emitted light but also the spectrally integrated intensity. Cavity structures are characterized using transmission measurements, spectral emission, and radiation patterns.