By Topic

Cross‐sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Feenstra, R.M. ; IBM Research Division, T. J. Watson Research Laboratory, P.O. Box 218, Yorktown Heights, New York 10598 ; Yu, E.T. ; Woodall, J.M. ; Kirchner, P.D.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.107804 

The scanning tunneling microscope is used to image GaAs pn‐doping superlattices, cleaved in ultrahigh vacuum. Current‐voltage (I‐V) measurements provide a detailed view of the variation in Fermi‐level position across the superlattice. The I‐V curves show the clear signature of nondepleted n‐ and p‐type material, with depleted regions appearing at the interfaces between n‐ and p‐type layers. The number of states available for tunneling is found to provide the major source of contrast in the images.

Published in:

Applied Physics Letters  (Volume:61 ,  Issue: 7 )