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Effect of photoexcitation on the surface band bending in δ‐doped GaAs:Si/Al0.33Ga0.67As double heterostructures

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4 Author(s)
Richards, D. ; Fraunhofer‐Institut für Angewandte Festkörperphysik, Tullastrasse 72, D‐7800 Freiburg, Germany ; Wagner, J. ; Fischer, A. ; Ploog, K.

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Photoluminescence spectroscopy in combination with electric‐field‐induced Raman scattering have been used to study the effect of photoexcitation on the surface electric field due to surface trap states in δ‐doped GaAs:Si/Al0.33Ga0.67As double heterostructures. Upon variation of the optical power density over four orders of magnitude a continuous reduction of the surface electric field is found for increasing cw illumination. This is evident from a decrease of the electric‐field‐induced Raman signal and from a high‐energy shift of the photoluminescence due to recombination of electrons at the δ‐doping layer with photogenerated holes localized at the topmost heterointerface. For the highest power densities of ≂103 W/cm2 the electric field at that interface becomes almost zero indicating that band bending due to surface trap states is essentially removed.  

Published in:

Applied Physics Letters  (Volume:61 ,  Issue: 22 )

Date of Publication:

Nov 1992

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