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YBa2Cu3O7 thin films grown on sapphire with epitaxial yttria‐stabilized zirconia buffer layers

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7 Author(s)
Chen, L.F. ; General Research Institute of NonFerrous Metals, Beijing 100088, China ; Chen, P.F. ; Li, L. ; Li, S.L.
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Epitaxial yttria‐stabilized zirconia (YSZ) buffer layers were grown successfully on sapphire (112¯0) substrates by using rf magnetron sputtering method. The films were cubic in structure with their (100) orientation normal to the substrate surface. YBa2Cu3O7 thin films were deposited on the YSZ/sapphire substrates by the in situ dc magnetron sputtering method. X‐ray diffraction analysis showed they were highly c‐axis oriented with the zero resistance temperature TCO=92 K and critical current density Jc=1.6×106 A/cm2 at 77 K.

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Applied Physics Letters  (Volume:61 ,  Issue: 20 )