Cart (Loading....) | Create Account
Close category search window
 

NF3 plasma generation by commercial 50 Hz alternating current discharge for dry etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Konuma, M. ; Max‐Planck‐Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, Germany ; Bauser, E.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.108280 

We generate NF3 plasma for the first time by commercial 50 Hz ac discharge. Mass and energy analysis of the plasma shows the predominant positive ion NF2+, followed by the NF3+ parent ion, NF+, and F+. The measured energy distribution of the ions corresponds to the energy distribution expected from the time dependent plasma potential in a 50 Hz discharge. The plasma can be applied for native oxide removal from Si substrates.

Published in:

Applied Physics Letters  (Volume:61 ,  Issue: 18 )

Date of Publication:

Nov 1992

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.