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Annealing effect on the carrier concentration in heavily Si‐doped n+‐InGaAs

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3 Author(s)
Watanabe, Noriyuki ; NTT LSI Laboratories, 3‐1, Morinosato Wakamiya, Atsugi‐shi, Kanagawa Pref., 243‐01 Japan ; Nittono, Takumi ; Watanabe, Kazuo

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Carrier concentration in very heavily silicon‐doped (about 2.7×1019 cm-3) n+‐In0.52Ga0.48As epilayer grown on GaAs substrate by metalorganic chemical vapor deposition is decreased by post‐growth annealing in the temperature range of 500–800 °C but keeps a value higher than 1.4×1019 cm-3. This value is fairly higher than the reported value for heavily Si‐doped GaAs after annealing. It is suggested that the decrease of carrier concentration is not caused by the formation of Si‐Si pairs or SiAs acceptors but caused by silicon atom movement from Ga‐ or In‐substitutional sites to interstitial sites at temperatures up to 600 °C and silicon atom outdiffusion at higher temperatures around 800 °C. In less doped (about 5.2×1018 and 1.6×1019 cm-3) samples, a smaller carrier or no decrease is detected after annealing.

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Applied Physics Letters  (Volume:61 ,  Issue: 16 )