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High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density

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2 Author(s)
Choi, H.K. ; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173‐9108 ; Eglash, S.J.

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The first GaInAsSb/AlGaAsSb diode lasers with a quantum‐well active region have been demonstrated. These devices, which were grown by molecular beam epitaxy, emit at ∼2.1 μm. For room‐temperature pulsed operation of lasers 100 μm wide, threshold current density as low as 260 A/cm2 and differential quantum efficiency up to 70% have been obtained for cavity lengths of 2000 and 300 μm, respectively. One device 100 μm wide and 1000 μm long has operated pulsed at heatsink temperatures up to 150 °C, with a characteristic temperature of 113 K between 20 and 40 °C. For another device of the same dimensions, cw output power up to 190 mW/facet has been achieved at a heatsink temperature of 20 °C. These characteristics represent a dramatic improvement in performance over double‐heterostructure GaInAsSb/AlGaAsSb diode lasers.

Published in:

Applied Physics Letters  (Volume:61 ,  Issue: 10 )