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Growth of highly strained InAs/InP heterostructures by metalorganic chemical vapor deposition using tertiarybutylarsine

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4 Author(s)
Tran, C.A. ; Groupe des Couches Minces‐Montreal Thin Film Group, Ecole Polytechnique de Montréal et l’Université de Montréal, P. O. Box 6079, Station ‘‘A,’’ Montréal, Québec H3C 3A7, Canada ; Masut, R.A. ; Cova, P. ; Brebner, J.L.

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InAs/InP highly strained quantum well, multiquantum well, and superlattice structures with abrupt interfaces have been grown using tertiarybutylarsine. The diffraction of x‐ray wave fields in these heterostructures has been used to examine the structural properties of quantum wells with a thickness of a few monolayers. The high resolution five‐crystal x‐ray diffraction patterns of single and multiple quantum wells exhibit a modulation of the interferences fringes which strongly depends on the structural parameters of these layers. A computer simulation of the x‐ray experimental Bragg diffraction pattern using dynamical theory shows good agreement between the measured and simulated spectra.

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Applied Physics Letters  (Volume:60 ,  Issue: 5 )