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Organometallic vapor‐phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen afterglow plasma in the growth region

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4 Author(s)
Pihlstrom, B.G. ; Colorado State University, Department of Electrical Engineering, Fort Collins, Colorado 80523 ; Sheng, T.Y. ; Thompson, L.R. ; Collins, G.J.

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In situ generated arsenic hydrides are reacted downstream with trimethylgallium (TMGa), both in the presence of and in the absence of a downstream hydrogen afterglow plasma. The homoepitaxial activation energy dramatically changes from 62 kcal/mol for the pure thermal to 21 kcal/mol for the plasma‐assisted growth. The carbon incorporation mechanism for the plasma‐assisted growth at temperatures less than 400 °C has a distinct activation energy for carbon incorporation of 23 kcal/mol, independent of V‐III ratios. At temperatures above 400 °C, the level of carbon incorporated in the films reaches a level that appears to be dependent on the gas‐phase precursor V‐III ratio. The activation energy of the low‐temperature region is consistent with the surface decomposition of arsenic hydrides.

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Applied Physics Letters  (Volume:60 ,  Issue: 25 )