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Stable amorphous silicon double stacked solar cell using low band gap amorphous silicon bottom i layer

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5 Author(s)
Jin Jang ; Department of Physics, Kyung Hee University, Seoul 130‐701, Korea ; Kim, Tae Gon ; Kim, Sung Chul ; Jun, Jung Mok
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We studied the preparation of low‐band‐gap amorphous silicon(a‐Si) and the photovoltaic applications of this material. We obtained a‐Si with optical band gap between 1.60 and 1.65 eV with hydrogen content less than 6 at.% and used this material as the bottom i layer of a‐Si double‐stacked solar cells. The conversion efficiency is about 9% and the degradation is less than 4% after light exposure for 100 h under 350 mW/cm2.

Published in:

Applied Physics Letters  (Volume:60 ,  Issue: 23 )

Date of Publication:

Jun 1992

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