By Topic

Epitaxial growth of alkaline earth fluoride films on HF‐treated Si and (NH4)2Sx‐treated GaAs without in situ cleaning

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Hung, L.S. ; Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650 ; Braunstein, G.H. ; Bosworth, L.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.106963 

HF‐treated Si and (NH4)2Sx‐treated GaAs were used as substrates for epitaxial growth of CaF2 and BaF2 films without in situ cleaning. The fluoride layers grown on the chemical‐treated substrates exhibit good crystalline quality and smooth surfaces. With fluorides on Si, minimum ion channeling yields are about 3%–5%, comparable with the best data reported in the literature using thermal etching or sputtering for substrate cleaning. CaF2 and BaF2 films grown on GaAs(100) exhibit the same (100)‐lattice orientation as the underlying GaAs substrate and no misoriented crystallites are observed. Pole figure measurements on BaF2 show that the crystallites are in close registry with the principal axes of the GaAs.

Published in:

Applied Physics Letters  (Volume:60 ,  Issue: 2 )