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Browse Journals & Magazines > Applied Physics Letters ...> Volume:60 Issue:19 Help

Use of tertiarybutylarsine in atomic layer epitaxy and laser‐assisted atomic layer epitaxy of device quality GaAs

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5 Author(s)
Chen, Q. ; National Center for Integrated Photonic Technology, Departments of Materials Science and Electrical Engineering/Electrophysics, University of Southern California, Los Angeles, California 90089‐0483 ; Beyler, C.A. ; Dapkus, P.D. ; Alwan, J.J.
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The use of trimethylgallium (TMGa) and tertiarybutylarsine (TBAs) in atomic layer epitaxy (ALE) and laser‐assisted atomic layer epitaxy (LALE) of GaAs is studied for the first time. TBAs is found to be a direct and suitable replacement for arsine (AsH3) in achieving monolayer self‐limiting growth. Carbon contamination in the GaAs films grown by LALE using TMGa and TBAs is greatly reduced relative to those using TMGa and AsH3. Laser structures single GaAs quantum wells grown by ALE and LALE using TBAs exhibit threshold current density as low as 300 and 520 A/cm2, respectively.

Published in:
Applied Physics Letters  (Volume:60 ,  Issue: 19 )

Date of Publication: May 1992

Page(s):
2418 - 2420
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.106991
Date of Current Version :
18 June 2009
Issue Date :
May 1992

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