Cart (Loading....) | Create Account
Close category search window
 

InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Bohrer, J. ; Technische Universität Berlin, Institut für Festkörperphysik I Hardenbergstrasse 36, D‐1000 Berlin 12, Germany ; Krost, A. ; Bimberg, D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.107047 

The optical properties of narrow InGaAs/InP quantum wells and their dependence on the gas switching procedure during the metalorganic chemical vapor deposition growth process are studied. A transition from In1-xGaxAs monolayer to InAs1-xPx monolayer splitting is observed in the photoluminescence spectrum, if the AsH3 purging time of the InP surface is equal larger than 2 s. This transition is attributed to a P‐As exchange at the lower interface (InGaAs on InP) leading to InAs1-xPx interfacial islands, which are larger than the excitonic diameter.

Published in:

Applied Physics Letters  (Volume:60 ,  Issue: 18 )

Date of Publication:

May 1992

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.