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InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition

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3 Author(s)
Bohrer, J. ; Technische Universität Berlin, Institut für Festkörperphysik I Hardenbergstrasse 36, D‐1000 Berlin 12, Germany ; Krost, A. ; Bimberg, D.

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The optical properties of narrow InGaAs/InP quantum wells and their dependence on the gas switching procedure during the metalorganic chemical vapor deposition growth process are studied. A transition from In1-xGaxAs monolayer to InAs1-xPx monolayer splitting is observed in the photoluminescence spectrum, if the AsH3 purging time of the InP surface is equal larger than 2 s. This transition is attributed to a P‐As exchange at the lower interface (InGaAs on InP) leading to InAs1-xPx interfacial islands, which are larger than the excitonic diameter.

Published in:

Applied Physics Letters  (Volume:60 ,  Issue: 18 )

Date of Publication:

May 1992

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