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Delta doped tunnel diode: a new negative differential resistance device

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2 Author(s)
Gilman, J.M.A. ; Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK ; O'Neill, A.G.

A novel tunnel diode is proposed. Modulation doping is used to define a two dimensional electron or hole gas on either side of a p-n junction tunnelling barrier. The additional parameter of doping spike separation enables a wide range of I-V characteristics to be selected. This leads to a decoupling of the current peak and corresponding voltage. Improvements in current density and speed are predicted.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 9 )