Cart (Loading....) | Create Account
Close category search window

Reaction and epitaxial regrowth at the Ni/GaAs(001) interface: A state‐specific x‐ray photoelectron diffraction investigation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Chambers, S.A. ; Boeing High Technology Center, Seattle, Washington 98124‐2499 ; Loebs, V.A.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We demonstrate, for the first time, that state‐specific x‐ray photoelectron diffraction can be used to determine the structural environment of reacted substrate atoms at a metal/semiconductor interface. Such measurements reveal that extensive reactivity at the Ni/GaAs(001) interface is followed by epitaxial regrowth of a CsCl phase in which Ni atoms occupy one sublattice and disrupted Ga and As atoms occupy the other sublattice.

Published in:

Applied Physics Letters  (Volume:60 ,  Issue: 1 )

Date of Publication:

Jan 1992

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.