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Low‐threshold InGaAs strained‐layer quantum‐well lasers (λ=0.98 μm) with GaInP cladding layers and mass‐transported buried heterostructure

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5 Author(s)
Liau, Z.L. ; Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173‐9108 ; Palmateer, S.C. ; Groves, S.H. ; Walpole, J.N.
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Buried‐heterostructure quantum‐well lasers fabricated by mass transport are reported for In0.18Ga0.82As/GaAs/Ga0.5In0.5P strained‐layer structures grown by atmospheric pressure organometallic vapor‐phase epitaxy. Threshold current densities as low as 85 A/cm2 are measured for broad‐stripe lasers, and buried‐stripe devices show threshold currents as low as 3 mA and differential quantum efficiencies as high as 34% per facet without coatings.

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Applied Physics Letters  (Volume:60 ,  Issue: 1 )