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Browse Journals & Magazines > Applied Physics Letters ...> Volume:86 Issue:24 Help

Fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique

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5 Author(s)
Yuen, Clement ; School of Electrical and Electronic Engineering, Nanyang Technological University, Block S2, Nanyang Avenue, Singapore 639798 ; Yu, S.F. ; Lau, S.P. ; Rusli,
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1947889 

We report the low-temperature (∼150 °C) fabrication of n-ZnO:Al/p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique. Diodelike rectifying current-voltage characteristics, with turn-on voltage of ∼3.8 V and low reverse leakage current of ≪10-2 μA, were measured at room temperature. In addition, ultraviolet emission with peak wavelength of ∼385 nm and full width at half maximum of ∼20 nm are observed at a forward biased voltage of ∼7.4 V. The ultraviolet electroluminescence from the heterojunction is originated from the exciton-exciton scattering inside the n-ZnO:Al film.

Published in:
Applied Physics Letters  (Volume:86 ,  Issue: 24 )

Date of Publication: Jun 2005

Page(s):
241111 - 241111-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1947889
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jun 2005

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