Cart (Loading....) | Create Account
Close category search window
 

Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Ozgur, U. ; Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 ; Fu, Y. ; Moon, Y.T. ; Yun, F.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1944903 

Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on TiN porous network templates formed by in situ thermal annealing of Ti in ammonia. The room-temperature decay times obtained from biexponential fits to time-resolved photoluminescence data are longer than ever reported for GaN. The carrier lifetime of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200 μm thick high-quality freestanding GaN. The linewidth of the asymmetric x-ray diffraction (XRD) (1012) peak decreases considerably with the use of TiN layer and with increasing in situ annealing time, indicating the reduction in threading dislocation density. However, no direct correlation is yet found between the decay times and the XRD linewidths, suggesting that point defect and impurity related nonradiative centers are the main parameters affecting the lifetime.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 23 )

Date of Publication:

Jun 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.