By Topic

Demonstration of undoped quaternary AlInGaN/GaN heterostructure field-effect transistor on sapphire substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Liu, Y. ; Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-Cho, Showa-Ku, Nagoya 466-8555, Japan ; Jiang, H. ; Arulkumaran, S. ; Egawa, T.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1942643 

Undoped AlInGaN/GaN heterostructure field-effect transistors (HFETs) have been demonstrated on sapphire substrate. The maximum drain current of 758 mA/mm and extrinsic transconductance of 123 mS/mm were obtained from the device with 2 μm gate length and 15 μm gate width. Such performance was comparable to that of a conventional modulation-doped (MOD) AlGaN/GaN HFET fabricated at same the condition. In spite of the high-density two-dimentional electron gas formed at the heterointerface, the AlInGaN/GaN HFET structure showed relatively low Hall mobility (689 cm2/V s at 300 K), which was due to the high concentration background doping in the undoped AlInGaN barrier region. Encouragingly, both the gate leakage current and drain current collapse showed lower values than that of the MOD-AlGaN/GaN HFET, which implied the potential application of quaternary AlInGaN to high-power and high-frequency devices.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 22 )