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Enhanced magnetic and bolometric sensitivity of La0.7Ce0.3MnO3 thin films due to 200 MeV Ag ion irradiation

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6 Author(s)
Choudhary, R.J. ; Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi 110067, India ; Kumar, Ravi ; Patil, S.I. ; Husain, Shahid
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The parameters for bolometric performance [temperature coefficient of resistance (TCR) and noise value] and magnetic sensitivity of pulsed-laser-deposited thin films of La0.7Ce0.3MnO3 and their dependence on the 200 MeV Ag ions irradiation are studied. It is observed that the TCR value and magnetic sensitivity can be tuned in different temperature regime by controlling the irradiation fluence value. It turns out that irradiation with a fluence value of 5×1010 ions/cm2 changes the TCR value in a positive direction and enhances magnetic sensitivity at room temperature, while irradiation with a fluence value of 1×1012 ions/cm2 enhances these parameters at 200 K. The observations are explained on the basis of structural and electrical transport modifications induced by the 200 MeV Ag ion irradiation.

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Applied Physics Letters  (Volume:86 ,  Issue: 22 )