By Topic

Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
9 Author(s)
Sun, Ho-Jung ; Department of Materials Science and Engineering, Kunsan National University, Kunsan 573-701, Korea ; Lee, Young-Jin ; Kim, Soo-Hyun ; Lee, Joo-Wan
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The behavior of cobalt silicidation was investigated in a 45-nm-wide contact opening on (100) silicon substrate. A Co film was deposited using sputtering techniques with elongated target-to-wafer spacing and a CoSi2 phase was developed after being annealed using rapid thermal processing at 750 °C for 30 s. It was revealed that the CoSi2 was grown epitaxially both on {111} and (100) Si at the same time, resulting in a faceted single crystal. Type A epitaxy on {111} Si was developed due to the coepitaxial growth. It was suggested that the tendency for the epitaxial growth of CoSi2 was strong in such a highly confined contact opening.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 22 )