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Mask-free photolithographic exposure using a matrix-addressable micropixellated AlInGaN ultraviolet light-emitting diode

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3 Author(s)
Jeon, C.W. ; Institute of Photonics, University of Strathclyde, Glasgow G4 0NW, United Kingdom ; Gu, E. ; Dawson, M.D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1942636 

We report the integration of a UV-curable polymer microlens array onto a matrix-addressable, 368-nm-wavelength, light-emitting diode device containing 64×64 micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emission from each micropixel to be collimated into a narrow beam of about 8-μm diam, over a distance of more than 500 μm. This device is demonstrated as a photolithographic exposure tool, where the pattern-programmable array plays the role both of light source and photomask. A simple pattern comprised of two disks having 16-μm diam and 30-μm spacing was transferred into an i-line photoresist.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 22 )

Date of Publication:

May 2005

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