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Synthesis and characterization of a single-crystal chemical-vapor-deposition diamond particle detector

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9 Author(s)
Balducci, A. ; INFN - Dipartimento di Ingegneria Meccanica, Università di Roma “Tor Vergata”, Via del Politecnico 1, I-00133 Roma, Italy ; Marinelli, M. ; Milani, E. ; Morgada, M.E.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1935037 

The growth conditions and the detection properties of a homoepitaxial diamond film, deposited in Roma “Tor Vergata” University Laboratories by microwave chemical vapor deposition on a high-pressure high-temperature single-crystal substrate are reported. An energy resolution as low as 1.1% was achieved when irradiating the device with 5.5 MeV 241Am α-particles. The dependence of the charge collection efficiency and the energy resolution on the applied voltage are reported as well. A clear saturation plateau was observed in both curves. Preliminary results with 14.8 MeV neutron irradiation are reported, showing a well separated 12C(n,α0)9Be reaction peak.

Published in:
Applied Physics Letters  (Volume:86 ,  Issue: 21 )

Date of Publication: May 2005

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