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The growth conditions and the detection properties of a homoepitaxial diamond film, deposited in Roma “Tor Vergata” University Laboratories by microwave chemical vapor deposition on a high-pressure high-temperature single-crystal substrate are reported. An energy resolution as low as 1.1% was achieved when irradiating the device with 5.5 MeV
Published in:
Applied Physics Letters
(Volume:86
,
Issue:
21
)
Date of Publication: May 2005