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Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

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3 Author(s)
Noborisaka, Jinichiro ; Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13, West 9, Sapporo 060-8628, Japan ; Motohisa, J. ; Fukui, Takashi

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1935038 

We report on the fabrication of GaAs hexagonal nanowires surrounded by {110} vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d0 of 50–200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9 μm were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discussed.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 21 )

Date of Publication:

May 2005

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