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Browse Journals & Magazines > Applied Physics Letters ...> Volume:86 Issue:21 Help

High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN

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5 Author(s)
Cai, Duanjun ; Department of Physics and Photonics Research Center, Xiamen University, Xiamen 361005, China ; Xu, Fuchun ; Kang, Junyong ; Gibart, Pierre
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1929866 

A high-spatial-resolution strain measurement by Auger electron spectroscopy was established and applied to analyze the strain distributions in epitaxial-lateral-overgrowth (ELO) GaN. The theoretical N KVV Auger line was set by fitting the experimental data and then the relation between Auger shift and strain was obtained. By this relation the local strain distributions in regions of special interest were measured, which well interpret the mechanism of ELO process. A crucial stage for strain release was found within a distance range above the mask. This evidence confirms the existence of the Auger physical shift.

Published in:
Applied Physics Letters  (Volume:86 ,  Issue: 21 )

Date of Publication: May 2005

Page(s):
211917 - 211917-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1929866
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2005

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