By Topic

Mechanisms of dynamic range limitations in GaAs/AlGaAs quantum-cascade lasers: Influence of injector doping

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
Jovanovic, V.D. ; School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom ; Indjin, D. ; Vukmirovic, N. ; Ikonic, Z.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The influence of doping density on the performance of GaAs/AlGaAs quantum-cascade lasers is presented. A fully self-consistent Schrödinger–Poisson analysis, based on a scattering rate equation approach, was employed to simulate the above threshold electron transport in laser devices. V-shaped local field domain formation was observed, preventing resonant subband level alignment in the high pumping-current regime. The resulting saturation of the maximal current, together with an increase of the threshold current, limits the dynamic working range under higher doping. Experimental measurements are in good agreement with the theoretical predictions.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 21 )