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Highly unidirectional InAs/InGaAs/GaAs quantum-dot ring lasers

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11 Author(s)
Hongjun Cao ; Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106-4343 ; Hui Deng ; Hai Ling ; Liu, Chiyu
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1931044 

We report fabrication and characterization of semiconductor ring lasers with quantum-dot active region. The InAs/InGaAs/GaAs “dots-in-a-well” ridge-waveguide ring lasers are monolithically integrated with coupling waveguides and monitoring quantum-dot photodetectors. The lowest threshold current density for semiconductor ring lasers is demonstrated. When enhanced by a forward biased S-section waveguide, stable unidirectional operation with record suppression ratio of counterpropagating waves exceeding 30 dB is achieved.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 20 )

Date of Publication:

May 2005

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