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Ferroelectric properties of sol-gel delivered epitaxial Pb(Zrx,Ti1-x)O3 thin films on Si using epitaxial γ-Al2O3 Layers

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6 Author(s)
Akai, D. ; Venture Business Laboratory, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Japan ; Yokawa, Mikako ; Hirabayashi, Keisuke ; Matsushita, Koji
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This letter reports on the fabrication and investigation of ferroelectric epitaxial Pb(Zr,Ti)O3(PZT)/Pt films on Si substrates using epitaxial γ-Al2O3 buffer layer for Si integrated ferroelectric devices. (001) and (111) epitaxial γ-Al2O3 films were grown on Si(001) and Si(111) substrates, respectively, using chemical vapor deposition. PZT films with various compositions were epitaxially grown on epitaxial Pt coated substrates using a sol-gel method. Epitaxial PZT films exhibited better ferroelectric and pyroelectric properties than polycrystalline PZT films. In particular, maximum pyroelectric coefficients of the epitaxial films were obtained, with values of 1.8×10-8 C/cm2 K for the PZT(001) film with a Zr/Ti ratio of 40/60 and 1.4×10-8 C/cm2K for the PZT(111) film with a Zr/Ti ratio of 52/48.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 20 )

Date of Publication:

May 2005

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