This letter reports on the fabrication and investigation of ferroelectric epitaxial Pb(Zr,Ti)O3(PZT)/Pt films on Si substrates using epitaxial γ-Al2O3 buffer layer for Si integrated ferroelectric devices. (001) and (111) epitaxial γ-Al2O3 films were grown on Si(001) and Si(111) substrates, respectively, using chemical vapor deposition. PZT films with various compositions were epitaxially grown on epitaxial Pt coated substrates using a sol-gel method. Epitaxial PZT films exhibited better ferroelectric and pyroelectric properties than polycrystalline PZT films. In particular, maximum pyroelectric coefficients of the epitaxial films were obtained, with values of 1.8×10-8 C/cm2 K for the PZT(001) film with a Zr/Ti ratio of 40/60 and 1.4×10-8 C/cm2K for the PZT(111) film with a Zr/Ti ratio of 52/48.