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Browse Journals & Magazines > Applied Physics Letters ...> Volume:86 Issue:20 Help

Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes

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9 Author(s)
Shatalov, M. ; Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 ; Chitnis, A. ; Yadav, P. ; Hasan, Md.F.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1927695 

This letter reports on a low thermal impedance flip-chip packaged deep ultraviolet light-emitting diodes emitting at 280 nm featuring a finned heat sink. For a single 100 μm×100 μm device flip-chip packaged onto an AlN submount and mounted on a TO-66 header with attached finned heat sink, a total junction to ambient thermal impedance as low as 33 °C/W was obtained. Numerical simulations of the heat transfer show that the excessive value of effective thermal impedance is mostly limited by insufficient junction area.

Published in:
Applied Physics Letters  (Volume:86 ,  Issue: 20 )

Date of Publication: May 2005

Page(s):
201109 - 201109-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1927695
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2005

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