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Observation of trapping defects in 4H–silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination

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3 Author(s)
Meyer, David J. ; The Pennsylvania State University, University Park, Pennsylvania 16802 ; Lenahan, P.M. ; Lelis, A.J.

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We utilize a highly sensitive electron spin resonance technique called spin-dependent recombination to observe deep level dangling bond centers at and very near the SiC/SiO2 interface in fully processed n-channel 4HSiC lateral metal-oxide-semiconductor field-effect transistors. The axially symmetric g tensor of the largest signal strongly suggests that the responsible defect is a dangling bond center with the dangling bond orbital pointing along the crystalline c axis.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 2 )

Date of Publication:

Jan 2005

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