By Topic

Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Yee-Chia Yeo ; Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 119260, Singapore ; Sun, J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1846152 

The strain field in the silicon channel of a metal–oxide–semiconductor transistor with silicon–germanium (Si1-yGey) source and drain regions was evaluated using a finite-element method. The physical origin of the vertical and lateral strain components in the transistor channel region was explained. The magnitude and distribution of the strain components, and their dependence on device design parameters such as the spacing L between the Si1-yGey stressors and the Ge mole fraction y in the stressors were investigated. Reducing the interstressor spacing L or increasing the Ge mole fraction y in the stressors increases the magnitude of the vertical tensile strain and the lateral compressive strain in the portion of the channel region where the inversion charge resides. This is beneficial for improving the hole mobility in p-channel metal–oxide–semiconductor transistors.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 2 )