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Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO2 layers

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5 Author(s)
Lopes, J.M.J. ; Instituto de Física – UFRGS, Cx. Postal 15051, 91501-970 Porto Alegre, Brazil ; Zawislak, F.C. ; Fichtner, P.F.P. ; Lovey, F.C.
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Sn nanoclusters are synthesized in 180 nm SiO2 layers after ion implantation and heat treatment. Annealings in N2 ambient at high temperatures (T≥700 °C) lead to the formation of Sn nanoclusters of different sizes in metallic and in oxidized phases. High-resolution transmission electron microscopy (TEM) analyses revealed that the formed larger nanoparticles are composed by a Sn metallic core and a SnOx shell. The corresponding blue-violet photoluminescence (PL) presents low intensity. However, for heat treatments in vacuum, the PL intensity is increased by a factor of 5 and the TEM data show a homogeneous size distribution of Sn nanoclusters. The low intensity of PL for the N2 annealed samples is associated with Sn oxidation.

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Applied Physics Letters  (Volume:86 ,  Issue: 2 )