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Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window

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6 Author(s)
Choi, Woon Kyung ; Optoelectronics and Optical Communication Laboratory, School of Electrical and Electronic Engineering, Chung-Ang University, 221 Heuksuk-Dong, Dongjak-ku, Seoul, 156-756, Korea ; Kim, Doo Gun ; Choi, Young Wan ; Lee, Seok
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This study demonstrates the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36 V and 10 μA, respectively. The lasing threshold current is 131 mA at 25 °C. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals.

Published in:

Applied Physics Letters  (Volume:86 ,  Issue: 2 )